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2SA0885|2SA885 Datasheet

  • 2SA0885|2SA885

  • Power Device - Power Transistors - Others

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Power Transistors
2SA0885
(2SA885)
Silicon PNP epitaxial planar type
Unit: mm
For low-frequency power amplification
Complementary to 2SC1846
鈻?/div>
Features
鈥?/div>
Output of 3 W can be obtained by a complementary pair with
2SC1846
鈥?/div>
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
蠁
3.16
鹵0.1
8.0
+0.5
鈥?.1
3.2
鹵0.2
3.8
鹵0.3
11.0
鹵0.5
1.9
鹵0.1
鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
鈭?5
鈭?5
鈭?
鈭?
鈭?.5
1.2
5.0
*
0.75
鹵0.1
Unit
4.6
鹵0.2
0.5
鹵0.1
0.5
鹵0.1
2.3
鹵0.2
3
1.76
鹵0.1
V
V
V
A
A
W
擄C
擄C
1
2
150
鈭?5
to
+150
Note) *: With a 100
脳
100
脳
2 mm Al heat sink
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE1 *
h
FE2
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
2. *: Rank classification
Rank
h
FE1
Q
85 to 170
R
120 to 240
S
170 to 340
Note) The part number in the parenthesis shows conventional part number.
Publication date: February 2003
SJD00002BED
Conditions
I
C
=
鈭?0 碌A(chǔ),
I
E
= 0
I
C
=
鈭?
mA, I
B
= 0
V
CB
= 鈭?0
V, I
E
=
0
V
CE
= 鈭?0
V, I
B
=
0
V
EB
= 鈭?
V, I
C
=
0
V
CE
= 鈭?0
V, I
C
= 鈭?00
mA
V
CE
= 鈭?
V, I
C
= 鈭?
A
I
C
= 鈭?00
mA, I
B
= 鈭?0
mA
V
CE
= 鈭?0
V, I
E
=
50 mA, f
=
200 MHz
V
CB
=
鈭?0
V, I
E
= 0, f = 1 MHz
Min
鈭?5
鈭?5
Typ
16.0
鹵1.0
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
Max
鈭?/div>
0.1
鈭?00
鈭?0
85
50
鈭?/div>
0.5
200
20
30
340
V
CE(sat)
f
T
C
ob
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
3.05
鹵0.1
Unit
V
V
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
錚?/div>
錚?/div>
V
1

2SA0885|2SA885相關(guān)型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC ...
  • 英文版
    For low-frequency power amplification and driver amplificati...
    PANASONIC
  • 英文版
    For low-frequency power amplification and driver amplificati...
    PANASONIC ...
  • 英文版
    For low-frequency power amplification and driver amplificati...
    PANASONIC
  • 英文版
    For low-frequency power amplification and driver amplificati...
    PANASONIC ...
  • 英文版
    For low-frequency driver amplification Complementary
    PANASONIC
  • 英文版
    For low-frequency driver amplification Complementary
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planer type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planer type
    PANASONIC ...
  • 英文版
    For general amplification Complementary to 2SC1573
    PANASONIC
  • 英文版
    For general amplification Complementary to 2SC1573
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planar type (For low-frequency power a...
    PANASONIC

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